Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 3: MEMS, NEMS & Sensing
 

Three-dimensional Simulation method of Anisotropic Wet Chemical Etching Process

Authors:J-G Lee and T. Won
Affilation:Inha University, KR
Pages:365 - 368
Keywords:anisotropic etch simulator, wet etching, 3D simulation, bulk micromachining
Abstract:Anisotropic wet chemical etching is still one of the fundamental techniques employed in silicon bulk micromaching. However, there are still unsolved problems with the simulation of the process. And most of the available simulation software is specialized stand-alone programs, featuring no embedding in general-purpose topography simulation tools. We developed a simulation tool for the three-dimensional wet etching of single-crystal silicon. Employing numerical simulation we could demonstrate the applicability of the numerical model to complex three-dimensional structures. And we demonstrate the simulation of the etch process of basic exemplary structures featuring the “virtual fabrication” of an industrial sensor structure manufactured by means of bulk micromachining.
Three-dimensional Simulation method of Anisotropic Wet Chemical Etching ProcessView PDF of paper
ISBN:0-9767985-8-1
Pages:913
Hardcopy:$119.95
 
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