Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 2: Nanoscale Fabrication

Fabricating Nanoscale Features Using the 2-Step NERIME TSI Nanolithography Process

Authors:S.F. Gilmartin, K. Arshak, D. Collins, O. Korostynska and A. Arshak
Affilation:Analog Devices, IE
Pages:233 - 236
Keywords:ion beam lithography, NERIME, nanolithography, topography, etch, semiconductor fabrication
Abstract:The 2-step negative resist image by dry etching (2-step NERIME) focused ion beam (FIB) top surface imaging (TSI) process is a novel nanolithography technique for creating nanometer scale resist features using conventional DNQ/novolak resists. The 2-step NERIME process combines the advantages of FIB lithography and TSI processing, and delivers high aspect ratio nanometer-scale resist CDs. Previous work has reported 90nm resist critical dimensions (CDs) on topography using the 2-Step NERIME process. We present 90nm resist CDs over substrate topography, and demonstrate fabrication of 80nm etched features masked using the 2-step NERIME process.
The etched nanoscale features exhibit minimal line edge roughness (LER) and excellent profile control, and demonstrate the suitability of the 2-step NERIME process as a nanolithography technique for applications requiring nanometer feature CD and profile control. Such etched features are of potential use in a variety of applications such as nanosensors, NEMs, MEMs, DRAM, CMOS and BiCMOS processing.
Fabricating Nanoscale Features Using the 2-Step NERIME TSI Nanolithography ProcessView PDF of paper
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