Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Nanoscale Fabrication Chapter 2

Nanowire formation for Single Electron Transistor using SEM Based Electron Beam Lithography (EBL) Technique: Positive Tone Vs Negative Tone E-beam Resist

Authors: M. Nuzaihan, U. Hashim, N.H.A. Halim and S.N.M. Bajuri

Affilation: Northern Malaysia University College of Engineering, Malaysia

Pages: 266 - 269

Keywords: electron beam lithography, nanowire, scanning electron microscope, positive tone e-beam resist, negative tone e-beam resist

Abstract:
Experimental studies of nanowires formation are carried out. The nanowires are fabricated using Scanning Electron Microscope Based Electron Beam Lithography (EBL) Technique with critical dimensions in less than 100nm. In order to complete the design cycle for the best nanowire, many contributing factors are of concerned including electron beam resists, resolution, working area/write field, structure size, step size, beam current, dose factor, exposure parameters and exposure time. The nanowires designed by the powerful RAITH ELPHY Quantum GDSII Editor, which is a CAD program for EBL and directly transferred on the sample coated with positive tone and negative tone e-beam resist. Comparison profiles and dimensions of both e-beams are included and discussed in this paper.

Nanowire formation for Single Electron Transistor using SEM Based Electron Beam Lithography (EBL) Technique: Positive Tone Vs Negative Tone E-beam Resist

ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95