Authors: X.H. Tang, Z.Y. Yin, J.H. Zhao and D. Sentosa
Affilation: NTU, Singapore
Pages: 145 - 148
Keywords: quantum dots, MOCVD, InAs
InAs quantum dots grown on InGaAs.InP matrix by MOCVD has been studied. Formation of the InAs QDs with different growth conditions has been investigated. Using a two-step growth method, high density, uniform QDs have been grown. The emission of the QDs has been measured. The emission wavelength of the QDs reaches 2.3 um at 77K.