Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Nanoscale Fabrication Chapter 2

InAs Quantum Dots Grown by MOCVD for Mid-infrared Emission

Authors: X.H. Tang, Z.Y. Yin, J.H. Zhao and D. Sentosa

Affilation: NTU, Singapore

Pages: 145 - 148

Keywords: quantum dots, MOCVD, InAs

Abstract:
InAs quantum dots grown on InGaAs.InP matrix by MOCVD has been studied. Formation of the InAs QDs with different growth conditions has been investigated. Using a two-step growth method, high density, uniform QDs have been grown. The emission of the QDs has been measured. The emission wavelength of the QDs reaches 2.3 um at 77K.

InAs Quantum Dots Grown by MOCVD for Mid-infrared Emission

ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95