InAs Quantum Dots Grown by MOCVD for Mid-infrared Emission

	Nanotech 2006 Vol. 3 Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3 Chapter 2: Nanoscale Fabrication
	InAs Quantum Dots Grown by MOCVD for Mid-infrared Emission
Authors:	X.H. Tang, Z.Y. Yin, J.H. Zhao and D. Sentosa
Affilation:	NTU, SG
Pages:	145 - 148
Keywords:	quantum dots, MOCVD, InAs
Abstract:	InAs quantum dots grown on InGaAs.InP matrix by MOCVD has been studied. Formation of the InAs QDs with different growth conditions has been investigated. Using a two-step growth method, high density, uniform QDs have been grown. The emission of the QDs has been measured. The emission wavelength of the QDs reaches 2.3 um at 77K.
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ISBN:	0-9767985-8-1
Pages:	913
Hardcopy:	$119.95

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