Authors: A. Rodriguez, R. Li, P. Yarlagadda, F. Papadimitrakopoulos, W. Huang, J. Ayers and F. Jain
Affilation: University of Connecticut, United States
Pages: 137 - 140
Keywords: ZnCdSe-CdSe, quantum dots, microwave plasma, MOCVD, nanophosphors, QD lasers
We have grown for the first time 3-8 nm CdSe and pseudomorophic ZnxCd1-xSe/ZnyCd1-ySe cladded quantum dots (QDs) (x > y) in a novel Photo assisted Microwave Plasma Metalorganic Chemical Vapor Phase Deposition (PMP-MOCVD) reactor. Influence of growth parameters including microwave power, ultraviolet intensity, gas phase II/VI [Zn+Cd/Se] molar ratio, temperature of growth, and post-growth processing has been studied. The grown dots are compared with those reported in the literature using high-resolution transmission electron microscopy (HR-TEM).<br> <br>Photoluminescence (PL) peaks and full width at half maximum (FWHM), and X-ray diffraction (XRD) data have been used to calculate dot size. The influence on PL intensity of various growth conditions is also presented. We have also simulated the optical gain of cladded quantum dots including the effect of strain in the cladding for different composition of cladding layer. Simulation is based on excitonic model.