| |
 | Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 1: Nano and Molecular Electronics and Photonics |
| | Novel FD SOI Devices Structure for Low Standby Power Applications | | Authors: | M-W Ma, T-S Chao, K-S Kao, J-S Huang and T-F Lei | | Affilation: | National Chiao Tung University, TW | | Pages: | 59 - 62 | | Keywords: | S/D extension shift, high-k offset spacer, fringing electric field, SOI | | Abstract: | In this paper, fully depleted (FD) SOI devices with S/D extension shift and high-k offset spacer were investigated in detail. The results show that the S/D extension shift can decrease Ioff significantly to reduce standby power dissipation, but Ion is also decreasing simultaneously. In order to overcome this disadvantage, the high-k offset spacer is used to increase Ion effectively due to the enhanced vertical fringing electric field. Consequently, a FD SOI device with 8nm S/D extension shift and TiO2 offset spacer can possess high Ion and ultra-low Ioff about 0.003 times lower than conventional SOI structure. | | ISBN: | 0-9767985-8-1 |
| Pages: | 913 |
| Hardcopy: | $185.00 |
|
| Order: | Mail/Fax Form |
| Special: | 3 CD Set — 15% off with Free Shipping |
| Up | |
|
| nanoPRwire™ |
 |
| News Headlines |
 |
|
|
| |
| |
|
| | |
| |
|
|
