Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Nano and Molecular Electronics and Photonics Chapter 1

Inner Sidewall Gate MOSFET with HfO2 gate Dielectric and Pt electrode

Authors: K. Im, C-G Ahn, J-H Yang, I-B Baek, C-J Choi, S. Lee, H. Hwang and W-J Cho

Affilation: Electronics and Telecommunications Research Institute, Korea

Pages: 24 - 27

Keywords: MOSFET, UTB, high-k, metal gate

Abstract:
UTB ISG MOSFET with gate length of 60 nm was fabricated with HfO2 gate dielectric and Pt gate electrode. The proposed device has some advantage over conventional replacement gate process. Besides simpler process, the remaining doped polysilicon can be a role as elevated source drain. And the gate length is easily adjustable by sidewall thickness.

Inner Sidewall Gate MOSFET with HfO2 gate Dielectric and Pt electrode

ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95