Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 1: Nano and Molecular Electronics and Photonics
 

Inner Sidewall Gate MOSFET with HfO2 gate Dielectric and Pt electrode

Authors:K. Im, C-G Ahn, J-H Yang, I-B Baek, C-J Choi, S. Lee, H. Hwang and W-J Cho
Affilation:Electronics and Telecommunications Research Institute, KR
Pages:24 - 27
Keywords:MOSFET, UTB, high-k, metal gate
Abstract:UTB ISG MOSFET with gate length of 60 nm was fabricated with HfO2 gate dielectric and Pt gate electrode. The proposed device has some advantage over conventional replacement gate process. Besides simpler process, the remaining doped polysilicon can be a role as elevated source drain. And the gate length is easily adjustable by sidewall thickness.
Inner Sidewall Gate MOSFET with HfO2 gate Dielectric and Pt electrodeView PDF of paper
ISBN:0-9767985-8-1
Pages:913
Hardcopy:$119.95
 
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