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Nanotech 2006 Vol. 3
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Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 1: Nano and Molecular Electronics and Photonics
 

Mobility of Electrons in Rectangular Si Nanowires

Authors:E. Ramayya, D. Vasileska, S.M. Goodnick and I. Knezevic
Affilation:Arizona State University, US
Pages:13 - 15
Keywords:discrete impurity effects, unintentional doping, interface traps, nanowires, Monte Carlo
Abstract:We investigate two issues in this paper. First, we examine the role of interface-traps on the device drain current in an SOI nanowire MOSFET. Afterwords, we investigate the role of the interface-roughness on the low-field electron mobility using the Ando model which is more sophisticated with respect to the model used in the device simulator.
ISBN:0-9767985-8-1
Pages:913
Hardcopy:$185.00
 
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