Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 1: Nano and Molecular Electronics and Photonics
 

Mobility of Electrons in Rectangular Si Nanowires

Authors:E. Ramayya, D. Vasileska, S.M. Goodnick and I. Knezevic
Affilation:Arizona State University, US
Pages:13 - 15
Keywords:discrete impurity effects, unintentional doping, interface traps, nanowires, Monte Carlo
Abstract:We investigate two issues in this paper. First, we examine the role of interface-traps on the device drain current in an SOI nanowire MOSFET. Afterwords, we investigate the role of the interface-roughness on the low-field electron mobility using the Ando model which is more sophisticated with respect to the model used in the device simulator.
Mobility of Electrons in Rectangular Si NanowiresView PDF of paper
ISBN:0-9767985-8-1
Pages:913
Hardcopy:$119.95
 
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