Mobility of Electrons in Rectangular Si Nanowires

	Nanotech 2006 Vol. 3 Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3 Chapter 1: Nano and Molecular Electronics and Photonics
	Mobility of Electrons in Rectangular Si Nanowires
Authors:	E. Ramayya, D. Vasileska, S.M. Goodnick and I. Knezevic
Affilation:	Arizona State University, US
Pages:	13 - 15
Keywords:	discrete impurity effects, unintentional doping, interface traps, nanowires, Monte Carlo
Abstract:	We investigate two issues in this paper. First, we examine the role of interface-traps on the device drain current in an SOI nanowire MOSFET. Afterwords, we investigate the role of the interface-roughness on the low-field electron mobility using the Ando model which is more sophisticated with respect to the model used in the device simulator.
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ISBN:	0-9767985-8-1
Pages:	913
Hardcopy:	$119.95

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