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 | Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 1: Nano and Molecular Electronics and Photonics |
| | Mobility of Electrons in Rectangular Si Nanowires | | Authors: | E. Ramayya, D. Vasileska, S.M. Goodnick and I. Knezevic | | Affilation: | Arizona State University, US | | Pages: | 13 - 15 | | Keywords: | discrete impurity effects, unintentional doping, interface traps, nanowires, Monte Carlo | | Abstract: | We investigate two issues in this paper. First, we examine the role of interface-traps on the device drain current in an SOI nanowire MOSFET. Afterwords, we investigate the role of the interface-roughness on the low-field electron mobility using the Ando model which is more sophisticated with respect to the model used in the device simulator. | | ISBN: | 0-9767985-8-1 |
| Pages: | 913 |
| Hardcopy: | $185.00 |
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