Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Nano and Molecular Electronics and Photonics Chapter 1

Theoretical Model for the Nanobundle Network Transistors Below and Above Percolation Limit

Authors: N. Pimparkar, J. Guo and M.A. Alam

Affilation: Purdue University, United States

Pages: 51 - 54

Keywords: CNT, NBT, nanobundle, network transistor, random

Recently, a lot of interest has been generated in the area of Macroelectronics with applications such as displays, chemical/biological sensors, photovoltaics and power electronics. Nanobundle network transistors (NBTs) have emerged as a viable, higher performance alternative to poly-silicon and organic transistors for these applications. Several experimental groups are coming up with a lot of experimental data but there is no theoretical model to explain these recent experiments. <br>&nbsp;<br>In the paper we develop the analytical models for the NBTs with channel length less that the tube length (for sub-percolating networks) and use it to explain some of the recent findings in the experiments by Infineon Technology. We also develop a numerical model for transistors with channel length greater than tube length based on percolation theory solving Poisson and Drift diffusion equation self consistently.

ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95

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