Theoretical Model for the Nanobundle Network Transistors Below and Above Percolation Limit

	Nanotech 2006 Vol. 3 Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3 Chapter 1: Nano and Molecular Electronics and Photonics
	Theoretical Model for the Nanobundle Network Transistors Below and Above Percolation Limit
Authors:	N. Pimparkar, J. Guo and M.A. Alam
Affilation:	Purdue University, US
Pages:	51 - 54
Keywords:	CNT, NBT, nanobundle, network transistor, random
Abstract:	Recently, a lot of interest has been generated in the area of Macroelectronics with applications such as displays, chemical/biological sensors, photovoltaics and power electronics. Nanobundle network transistors (NBTs) have emerged as a viable, higher performance alternative to poly-silicon and organic transistors for these applications. Several experimental groups are coming up with a lot of experimental data but there is no theoretical model to explain these recent experiments. In the paper we develop the analytical models for the NBTs with channel length less that the tube length (for sub-percolating networks) and use it to explain some of the recent findings in the experiments by Infineon Technology. We also develop a numerical model for transistors with channel length greater than tube length based on percolation theory solving Poisson and Drift diffusion equation self consistently.
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ISBN:	0-9767985-8-1
Pages:	913
Hardcopy:	$119.95

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