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 | Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 1: Nano and Molecular Electronics and Photonics |
| | Reproducibility of Silicon Single Electron Quantum Dot Transistor | | Authors: | U. Hasim and S. Sutikno | | Affilation: | Nothern Malaysia University College of Engineering, MY | | Pages: | 35 - 38 | | Keywords: | reproducibility, quantum dot, single electron transistor, source-drain contact | | Abstract: | In principle, based on the form of tunnel junction, single electron transistor (SET) can be classified into four types, i.e. nanowire SET, quantum dot SET, nanotube SET and point contact SET. Another classification is SET based on the kind of conducting material between gate and island, which consist of resistive-SET and capacitive-SET. There are about 31 types of SET designs have previously published by many researchers. Unfortunately, the reproducibility of each SET is still low. Therefore, it is very important to observe a SET design which has the best reproducibility. This paper describes each SET design of 31 all in the reproducibly design point of view at most the form of source-drain contact junction, layers structure, and the modification of fabrication technology. The reproducibility of single electron transistor can be observed from the equity of design, dimension and device characteristics. Indeed, the forms of SET source-drain contact junction have very large influences on the difficulty level of fabrication process and electrical characteristics. | | ISBN: | 0-9767985-8-1 |
| Pages: | 913 |
| Hardcopy: | $185.00 |
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