Nano Science and Technology Institute
Nanotech 2006 Vol. 1
Nanotech 2006 Vol. 1
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1
 
Chapter 8: Characterization
 

A Novel Approach of Sample Preparation for SCM Inspection in the DRAM Device Structures

Authors:J.L. Lue, H.W Liu, E. Wu, B. Pai, S. Fan and T. Wang
Affilation:ProMOS Technologies Inc, TW
Pages:753 - 755
Keywords:deep trench, SCM, DRAM, 2-D doping
Abstract:This paper discusses the removal of the doped-polysilicon of a gate transistor by wet chemical etching containing the spacer oxide and nitride that remain. This technique significantly improves the image quality of 2-D doping profile of SCM that properly provides the results of the desired device structures for inline monitoring and failure analysis or for product characterization.
A Novel Approach of Sample Preparation for SCM Inspection in the DRAM Device StructuresView PDF of paper
ISBN:0-9767985-6-5
Pages:871
Hardcopy:$119.95
 
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