A Novel Approach of Sample Preparation for SCM Inspection in the DRAM Device Structures

	Nanotech 2006 Vol. 1 Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1 Chapter 8: Characterization
	A Novel Approach of Sample Preparation for SCM Inspection in the DRAM Device Structures
Authors:	J.L. Lue, H.W Liu, E. Wu, B. Pai, S. Fan and T. Wang
Affilation:	ProMOS Technologies Inc, TW
Pages:	753 - 755
Keywords:	deep trench, SCM, DRAM, 2-D doping
Abstract:	This paper discusses the removal of the doped-polysilicon of a gate transistor by wet chemical etching containing the spacer oxide and nitride that remain. This technique significantly improves the image quality of 2-D doping profile of SCM that properly provides the results of the desired device structures for inline monitoring and failure analysis or for product characterization.
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ISBN:	0-9767985-6-5
Pages:	871
Hardcopy:	$119.95

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