Authors: J.L. Lue, H.W Liu, E. Wu, B. Pai, S. Fan and T. Wang
Affilation: ProMOS Technologies Inc, Taiwan
Pages: 753 - 755
Keywords: deep trench, SCM, DRAM, 2-D doping
This paper discusses the removal of the doped-polysilicon of a gate transistor by wet chemical etching containing the spacer oxide and nitride that remain. This technique significantly improves the image quality of 2-D doping profile of SCM that properly provides the results of the desired device structures for inline monitoring and failure analysis or for product characterization.