Authors: M.J. Kumar, V. Venkataraman and S.K. Gupta
Affilation: Indian Institute of Technology, India
Pages: 709 - 712
Keywords: high-K gate dielectric, threshold voltage, fringe capacitance, SOI MOSFET
In this paper, we propose a novel device structure, known as the Grounded Laminated Gate (GLG) SOI MOSFET to eliminate the gate fringe field effects on the threshold voltage of short channel SOI MOSFETs. Our simulaton results demonstrate that the threshold voltage roll-off with increasing dielectric constant is effectively elminated in the proposed structure.