A New Grounded Lamination Gate (GLG) SOI MOSFET for Diminished Fringe Capacitance Effects

	Nanotech 2006 Vol. 1 Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1 Chapter 7: Nanoscale Modeling
	A New Grounded Lamination Gate (GLG) SOI MOSFET for Diminished Fringe Capacitance Effects
Authors:	M.J. Kumar, V. Venkataraman and S.K. Gupta
Affilation:	Indian Institute of Technology, IN
Pages:	709 - 712
Keywords:	high-K gate dielectric, threshold voltage, fringe capacitance, SOI MOSFET
Abstract:	In this paper, we propose a novel device structure, known as the Grounded Laminated Gate (GLG) SOI MOSFET to eliminate the gate fringe field effects on the threshold voltage of short channel SOI MOSFETs. Our simulaton results demonstrate that the threshold voltage roll-off with increasing dielectric constant is effectively elminated in the proposed structure.
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ISBN:	0-9767985-6-5
Pages:	871
Hardcopy:	$119.95

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