Nanotech 2006 Vol. 1
Nanotech 2006 Vol. 1
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1

Nanoscale Modeling Chapter 7

Minimized atomistic model (MAM) of BmIn cluster and the effect of Ge pre-amorphization implant (Ge-PAI) on boron diffusion

Authors: J-H Yoo, C-O Hwang, K-S Yoon, J-S Kim and T. Won

Affilation: School of Engineering, National IT Research Center for Computational Electronics, Inha University, Korea

Pages: 689 - 692

Keywords: atomistic modeling, simple atomistic model, kinetic Monte Carlo, Boron diffusion

Abstract:
In this paper, we report on our minimized atomistic model (MAM) composed of the evolution path from B2I to B3I for describing kinetic Monte Carlo (KMC) in boron diffusion. MAM, which is based on the simple continuum model [1] and simple atomistic model [2] in Fig. 2 and 3, takes the intermediate clusters and dominant clusters into account for understanding the evolutionary behaviour of boron interstitial clusters during boron diffusion. Finally, to verify the accuracy of our model, we implemented boron diffusion using MAM in wafer considering the Ge-PAI. The results of our simulation agreed with SIMS data

Minimized atomistic model (MAM) of BmIn cluster and the effect of Ge pre-amorphization implant (Ge-PAI) on boron diffusion

ISBN: 0-9767985-6-5
Pages: 871
Hardcopy: $119.95