Nanotech 2006 Vol. 1
Nanotech 2006 Vol. 1
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1

Nanoscale Modeling Chapter 7

New One-Particle Monte Carlo Method for Nanoscale Device Simulation

Authors: S.C. Brugger and A. Schenk

Affilation: Swiss Federal Institut of Technology, Switzerland

Pages: 673 - 676

Keywords: device simulation, Monte Carlo, generation-recombination, impact ionisation

Abstract:
A new one-particle Monte Carlo iteration scheme has been found to<br>self-consistently take into account generation-recombination<br>processes. The basic idea is to couple the BTE not only with the<br>Poisson equation, but also with the continuity equation by using the<br>exact transport coefficients from the MC simulation in high-field<br>regions and the known analytical transport coefficients in low-field<br>regions. This approach will be useful e.g. for the simulation of<br>floating body effects in nanoscale double- and multi-gate SOI MOSFETs.

New One-Particle Monte Carlo Method for Nanoscale Device Simulation

ISBN: 0-9767985-6-5
Pages: 871
Hardcopy: $119.95