Nano Science and Technology Institute
Nanotech 2006 Vol. 1
Nanotech 2006 Vol. 1
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1
Chapter 7: Nanoscale Modeling

New One-Particle Monte Carlo Method for Nanoscale Device Simulation

Authors:S.C. Brugger and A. Schenk
Affilation:Swiss Federal Institut of Technology, CH
Pages:673 - 676
Keywords:device simulation, Monte Carlo, generation-recombination, impact ionisation
Abstract:A new one-particle Monte Carlo iteration scheme has been found to
self-consistently take into account generation-recombination
processes. The basic idea is to couple the BTE not only with the
Poisson equation, but also with the continuity equation by using the
exact transport coefficients from the MC simulation in high-field
regions and the known analytical transport coefficients in low-field
regions. This approach will be useful e.g. for the simulation of
floating body effects in nanoscale double- and multi-gate SOI MOSFETs.
New One-Particle Monte Carlo Method for Nanoscale Device SimulationView PDF of paper
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