Static dielectric constant of SiO2 embedded with silicon nanocrystals

	Nanotech 2006 Vol. 1 Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1 Chapter 4: Nanoparticle Processes & Applications
	Static dielectric constant of SiO2 embedded with silicon nanocrystals
Authors:	C.Y. Ng, M. Yang, J.I. Wong and T.P. Chen
Affilation:	Nanyang Technological University, SG
Pages:	435 - 438
Keywords:	dielectric constant, silicon nanocrystal, effective medium approximation
Abstract:	The static dielectric constant of isolated silicon nanocrystal (nc-Si) embedded in a SiO2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell-Garnett effective medium approximation and the Stopping and Range of Ions in Matter (SRIM) simulation. The nc-Si in the SiO2 can be modeled based on multi sub-layers model with each sub-layer has an equal thicknesses. For the nc-Si with a mean size of ~4.5 nm, the dielectric constant so determined is 9.6, being consistent with a theoretical prediction. This value is significantly lower than the static dielectric constant (11.9) of bulk crystalline Si, indicating the significance of nc-Si quantum size effect. The information of nc-Si dielectric constant is not only important to the fundamental physics but also useful to the design and modeling of nc-Si-based memory devices.
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ISBN:	0-9767985-6-5
Pages:	871
Hardcopy:	$119.95

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