| |
 | Nanotech 2006 Vol. 1
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1
Chapter 4: Nanoparticle Processes & Applications |
| | Static dielectric constant of SiO2 embedded with silicon nanocrystals | | Authors: | C.Y. Ng, M. Yang, J.I. Wong and T.P. Chen | | Affilation: | Nanyang Technological University, SG | | Pages: | 435 - 438 | | Keywords: | dielectric constant, silicon nanocrystal, effective medium approximation | | Abstract: | The static dielectric constant of isolated silicon nanocrystal (nc-Si) embedded in a SiO2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell-Garnett effective medium approximation and the Stopping and Range of Ions in Matter (SRIM) simulation. The nc-Si in the SiO2 can be modeled based on multi sub-layers model with each sub-layer has an equal thicknesses. For the nc-Si with a mean size of ~4.5 nm, the dielectric constant so determined is 9.6, being consistent with a theoretical prediction. This value is significantly lower than the static dielectric constant (11.9) of bulk crystalline Si, indicating the significance of nc-Si quantum size effect. The information of nc-Si dielectric constant is not only important to the fundamental physics but also useful to the design and modeling of nc-Si-based memory devices. | | ISBN: | 0-9767985-6-5 |
| Pages: | 871 |
| Hardcopy: | $185.00 |
|
| Order: | Mail/Fax Form |
| Special: | 3 CD Set — 15% off with Free Shipping |
| Up | |
|
| nanoPRwire™ |
 |
| News Headlines |
 |
|
|
| |
| |
|
| | |
| |
|
|
