Fabrication and Transistor Demonstration on Si-based Nanomembranes

	Nanotech 2006 Vol. 1 Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1 Chapter 1: Nanoscale Structures and Devices
	Fabrication and Transistor Demonstration on Si-based Nanomembranes
Authors:	H-C Yuan, M.M. Roberts, D.E. Savage, M.G. Lagally, Z. Ma and G.K. Celler
Affilation:	University of Wisconsin-Madison, US
Pages:	68 - 71
Keywords:	elastic strain sharing, nanomembrane, Si, SiGe, transferable
Abstract:	We demonstrate the fabrication of free standing Si, SiGe, and Si/SiGe/Si membranes and the ability to transfer them onto various kinds of host substrates. In addition to the unstrained Si, SiGe membranes, strained Si is realized from Si/SiGe/Si film stack through elastic strain sharing between SiGe alloy and Si layers. We have fabricated thin-film transistors (TFTs) using either high-temperature or low-temperature process on the transferred membranes and demonstrate high current drive capability. This technique also enables numerous possibility of hetero-material integration.
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ISBN:	0-9767985-6-5
Pages:	871
Hardcopy:	$119.95

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