Nanotech 2006 Vol. 1
Nanotech 2006 Vol. 1
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1

Nanoscale Structures and Devices Chapter 1

First-principle Study for Neutral Indium Migration in Silicon

Authors: K-S Yoon and T. Won

Affilation: Inha University, Korea

Pages: 13 - 16

Keywords: indium, ab-initio, minimum energy path, migration energy

Abstract:
We could figure out the atomistic configurations and migration energy during indium diffusion in silicon through our ab-initio calculations, which consists of searching for saddle points from a minimum and reaction pathway between the two stable states by using TST. After finding the transition state, the energy barrier for the diffusing particle was obtained through calculating the exact total energy at the transition state.

First-principle Study for Neutral Indium Migration in Silicon

ISBN: 0-9767985-6-5
Pages: 871
Hardcopy: $119.95