 | Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 9: MEMS Modeling and Design |
Electromechanical Modeling of MEMS Resonators with MOSFET Detection | |
| Authors: | N. Abelé, V. Pott, K. Boucart, F. Casset, K. Séguéni, P. Ancey and A.M. Ionescu |
| Affilation: | Swiss Federal Institute of Technology of Lausanne, CH |
| Pages: | 553 - 556 |
| Keywords: | MEMS, resonator, modeling, RSG-MOSFET, MOSFET detection |
| Abstract: | This work reports on analytical modeling and investigation of Resonant Suspended-Gate MOSFETs (RSG-MOSFET) as future solutions for RF applications including MEMS and ICs. Pure metal-metal capacitive detection for resonators is shown to be the most limiting factor for the use of high frequency resonators in circuit application. We demonstrate the necessity of using a MOSFET detection instead of a capacitive one for very high frequency resonators. The analytical model is based on the Resonant Gate Transistor (RGT) model that was adjusted to include new resonator geometries, scaled nm-to-ìm device dimensions and based on a more advanced transistor model. |
| ISBN: | 0-9767985-2-2 |
| Pages: | 786 |
| Hardcopy: | $165.00 |
| Order: | Mail/Fax Form |
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