Nano Science and Technology Institute
Nanotech 2005 Vol. 3
Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 9: MEMS Modeling and Design

Electromechanical Modeling of MEMS Resonators with MOSFET Detection

Authors:N. Abelé, V. Pott, K. Boucart, F. Casset, K. Séguéni, P. Ancey and A.M. Ionescu
Affilation:Swiss Federal Institute of Technology of Lausanne, CH
Pages:553 - 556
Keywords:MEMS, resonator, modeling, RSG-MOSFET, MOSFET detection
Abstract:This work reports on analytical modeling and investigation of Resonant Suspended-Gate MOSFETs (RSG-MOSFET) as future solutions for RF applications including MEMS and ICs. Pure metal-metal capacitive detection for resonators is shown to be the most limiting factor for the use of high frequency resonators in circuit application. We demonstrate the necessity of using a MOSFET detection instead of a capacitive one for very high frequency resonators. The analytical model is based on the Resonant Gate Transistor (RGT) model that was adjusted to include new resonator geometries, scaled nm-to-ìm device dimensions and based on a more advanced transistor model.
Electromechanical Modeling of MEMS Resonators with MOSFET DetectionView PDF of paper
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