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 | Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 2: CNT, Nano and Molecular Electronics |
| | The Effect of Source/Drain Extension Asymmetry on the Leakage Current of Ohmicly-contacted Carbon Nanotube FETs | | Authors: | K. Alam and R. Lake | | Affilation: | University of California Riverside, US | | Pages: | 136 - 139 | | Keywords: | CNT, leakage current | | Abstract: | The geometry dependence of the leakage current by modeling the effect of source/drain extension asymmetry on the leakage current of CNTFETs with 20 nm wrap-around gates is investigated. The symmetric geometry has the highest leakage current. The asymmetric geometry with drain extension fixed to 4 nm results in the next highest leakage. The asymmetric geometry with source extension fixed to 4 nm results in the lowest leakage. This configuration blocks the inter-band tunneling at the high field region of the drain. The best device has a high ON/OFF current ratio (~1E6) and inverse subthreshold slope close to the ideal value (~63 mV/dec). | | ISBN: | 0-9767985-2-2 |
| Pages: | 786 |
| Hardcopy: | $165.00 |
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