Nanotech 2005 Vol. 3
Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3

CNT, Nano and Molecular Electronics Chapter 2

The Effect of Source/Drain Extension Asymmetry on the Leakage Current of Ohmicly-contacted Carbon Nanotube FETs

Authors: K. Alam and R. Lake

Affilation: University of California Riverside, United States

Pages: 136 - 139

Keywords: CNT, leakage current

Abstract:
The geometry dependence of the leakage current by modeling the effect of source/drain extension asymmetry on the leakage current of CNTFETs with 20 nm wrap-around gates is investigated. The symmetric geometry has the highest leakage current. The asymmetric geometry with drain extension fixed to 4 nm results in the next highest leakage. The asymmetric geometry with source extension fixed to 4 nm results in the lowest leakage. This configuration blocks the inter-band tunneling at the high field region of the drain. The best device has a high ON/OFF current ratio (~1E6) and inverse subthreshold slope close to the ideal value (~63 mV/dec).

The Effect of Source/Drain Extension Asymmetry on the Leakage Current of Ohmicly-contacted Carbon Nanotube FETs

ISBN: 0-9767985-2-2
Pages: 786
Hardcopy: $109.95