Nanotech 2005 Vol. 3
Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3

CNT, Nano and Molecular Electronics Chapter 2

Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration

Authors: M. Pourfath, A. Gehring, B.H. Cheong, W.J. Park, H. Kosina and S. Selberherr

Affilation: Vienna University of Technology, Austria

Pages: 128 - 131

Keywords: carbon nanotube field effect transistors, double gate structure, ambipolar behavior

Abstract:
Vertically grown carbon nanotubes have the potential for tera-level Integration. However, the well-known ambipolar behavior limits the performance of carbon nanotube field effect transistors. In this work we demonstrate that a double gate structure effectively suppresses the ambipolar behavior. Using the double gate design excellent device characteristics along with the potential for high scale integration are achieved, which are necessary for future nanoelectronic applications.

Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration

ISBN: 0-9767985-2-2
Pages: 786
Hardcopy: $109.95