Nano Science and Technology Institute
Nanotech 2005 Vol. 3
Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 2: CNT, Nano and Molecular Electronics

Two-Dimensional Simulation of Tunneling Using Quantum Lattice-Gas Automata

Authors:A. Sakai, Y. Kamakura and K. Taniguchi
Affilation:Osaka University, JP
Pages:180 - 183
Keywords:quantum lattice-gas automata, quantum tunneling, surface roughness
Abstract:We present the two-dimensional simulation of quantum tunneling considering the rough surface. It is demonstrated that the electron transmission through the potential barrier is significantly affected by the surface roughness pattern even if the same roughness parameter is assumed. We consider that the variation of the $T$ depending on the surface roughness patterns would become one of the source of the device fluctuation in the agressively scaled MOSFETs.
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