Liu Y., Chen T.P., Ng C.Y., Ding L.
Nanyang Technological University, SG
Keywords: charge trapping, MOS, Si nanocrystal
In this work, Si nanocrystals with different distributions were embedded in the gate oxide with ion implantation technique. C-V and time-domain capacitance measurements were conducted to study the electrical characteristics of MOS structures. It is observed that charge trapping in nc-Si with different distributions in the gate oxide leads to different behaviors in MOS electrical characteristics.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 8, 2005
Pages: 146 - 149
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Carbon Nano Structures & Devices, Nanoelectronics
ISBN: 0-9767985-2-2