Nano Science and Technology Institute
Nanotech 2005 Vol. 3
Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 2: CNT, Nano and Molecular Electronics
 

Influence of Si Nanocrystal Distribution on Electrical Characteristics of MOS Structures

Authors:Y. Liu, T.P. Chen, C.Y. Ng and L. Ding
Affilation:Nanyang Technological University, SG
Pages:146 - 149
Keywords:Si nanocrystal, MOS, charge trapping
Abstract:In this work, Si nanocrystals with different distributions were embedded in the gate oxide with ion implantation technique. C-V and time-domain capacitance measurements were conducted to study the electrical characteristics of MOS structures. It is observed that charge trapping in nc-Si with different distributions in the gate oxide leads to different behaviors in MOS electrical characteristics.
Influence of Si Nanocrystal Distribution on Electrical Characteristics of MOS StructuresView PDF of paper
ISBN:0-9767985-2-2
Pages:786
Hardcopy:$109.95
 
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