 | Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 2: CNT, Nano and Molecular Electronics |
Influence of Si Nanocrystal Distribution on Electrical Characteristics of MOS Structures | |
| Authors: | Y. Liu, T.P. Chen, C.Y. Ng and L. Ding |
| Affilation: | Nanyang Technological University, SG |
| Pages: | 146 - 149 |
| Keywords: | Si nanocrystal, MOS, charge trapping |
| Abstract: | In this work, Si nanocrystals with different distributions were embedded in the gate oxide with ion implantation technique. C-V and time-domain capacitance measurements were conducted to study the electrical characteristics of MOS structures. It is observed that charge trapping in nc-Si with different distributions in the gate oxide leads to different behaviors in MOS electrical characteristics. |
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| ISBN: | 0-9767985-2-2 |
| Pages: | 786 |
| Hardcopy: | $109.95 |
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