Nano Science and Technology Institute
Nanotech 2005 Vol. 3
Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 10: Computational Methods, Numerics and Software Tools

Electron Energy States of INAS/GAAS Quantum Ring Array

Authors:I. Filikhin, E. Deyneka, G. Melikian and B. Vlahovic
Affilation:North Carolina Central University, US
Pages:696 - 699
Keywords:semiconductor, quantum rings, electron, energy states
Abstract:Planar array of semiconductor quantum rings is studied under the energy dependent effective mass approximation. Rectangular shape InAs quantum rings (QR) are embedded into the GaAs substrate. The 3D confined energy problem is solved numerically by the finite element method in the single sub-band approach. Periodic boundary conditions for the electron wave function on the surface side of the QR array unit cell are chosen. The QR’s mutual influence in an array was studied. It is shown that the effect of proximity among QRs is sufficient, when the distances between neighbouring QRs is less than 2-4 nm. The magnitude of this effect depends on the value of the confinement energy. It was also found that for the wide QRs the non-parabolic effect does considerably alter the energy of the electron states, especially when the height and the width of QR are relatively small.
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