Nano Science and Technology Institute
Nanotech 2005 Vol. 3
Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 1: Nanoscale Device and Process Modeling

Topography Simulation for Structural Analysis Using Cell Advancing Method

Authors:J-G Lee, S. Yoon, O. Kwon and T. Won
Affilation:Inha University, KR
Pages:91 - 94
Keywords:topography simulation, cell advancing method, deposition/etching process
Abstract:We propose an cell advancing method which is different but stems from the traditional cell method for accurate topography simulation. It is considered that the cell advancing method is very suitable to figure out the profile during the deposition/etching process of nano-scale processes. Using the finite element method (FEM), we perform a mesh generation of the simulated topography for the calculation of parasitic capacitances
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