Lee J-G, Yoon S., Kwon O., Won T.
Inha University, KR
Keywords: cell advancing method, deposition/etching process, Topography Simulation
We propose an cell advancing method which is different but stems from the traditional cell method for accurate topography simulation. It is considered that the cell advancing method is very suitable to figure out the profile during the deposition/etching process of nano-scale processes. Using the finite element method (FEM), we perform a mesh generation of the simulated topography for the calculation of parasitic capacitances
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 8, 2005
Pages: 91 - 94
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Advanced Manufacturing, Nanoelectronics
ISBN: 0-9767985-2-2