Nanotech 2005 Vol. 3
Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3

Nanoscale Device and Process Modeling Chapter 1

Topography Simulation for Structural Analysis Using Cell Advancing Method

Authors: J-G Lee, S. Yoon, O. Kwon and T. Won

Affilation: Inha University, Korea

Pages: 91 - 94

Keywords: topography simulation, cell advancing method, deposition/etching process

Abstract:
We propose an cell advancing method which is different but stems from the traditional cell method for accurate topography simulation. It is considered that the cell advancing method is very suitable to figure out the profile during the deposition/etching process of nano-scale processes. Using the finite element method (FEM), we perform a mesh generation of the simulated topography for the calculation of parasitic capacitances

Topography Simulation for Structural Analysis Using Cell Advancing Method

ISBN: 0-9767985-2-2
Pages: 786
Hardcopy: $109.95