Nano Science and Technology Institute
Nanotech 2005 Vol. 3
Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 1: Nanoscale Device and Process Modeling

Random Dopant Induced Fluctuations of Characteristics in Deep Sub-micron MOSFETs

Authors:H-M Chou, S-C Lo, J-H Tsai and Y. Li
Affilation:NCHC, TW
Pages:80 - 83
Keywords:processes variations, random dopant fluctuation, double gate, SOI, numerical simulation
Abstract:As the gate length of MOSFET devices shrinks down below 100 nm, the fluctuation of major devices parameter, namely, threshold voltage (VTH), subthreshold swing, drain current (ID) and subthreshold leakage current duo to influences of processes variations becomes a serious problem. The fluctuation in conjunction with the scaling of the supply voltage may seriously the functionality, performance and yield of the corresponding systems. Random dopant fluctuation is one of the problems. Therefore, as scaling size of devices and developing of new transistor architecture, the random dopant fluctuation may be required to avoid so as improving the device integration.
Random Dopant Induced Fluctuations of Characteristics in Deep Sub-micron MOSFETsView PDF of paper
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