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 | Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 1: Nanoscale Device and Process Modeling |
| | Simulation of Dynamic NBTI Degradation for a 90nm CMOS Technology | | Authors: | R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring and S. Selberherr | | Affilation: | Vienna University of Technology, AT | | Pages: | 29 - 32 | | Keywords: | transistor reliability simulation, NBTI degradation, lifetime estimation | | Abstract: | The NBTI degradation was systematically investigated for a 90nm p-MOSFET by simulation and experiment. The reaction-diffusion model was extended for NBTI simulations at arbitrary gate voltage, frequency, and duty cycle within a calibrated range. Long-time NBTI degradation was simulated up to 10 years in order to estimate the transistor lifetime under typical chip operation conditions. | | ISBN: | 0-9767985-2-2 |
| Pages: | 786 |
| Hardcopy: | $165.00 |
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