Authors: R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring and S. Selberherr
Affilation: Vienna University of Technology, Austria
Pages: 29 - 32
Keywords: transistor reliability simulation, NBTI degradation, lifetime estimation
The NBTI degradation was systematically investigated for a 90nm p-MOSFET by simulation and experiment. The reaction-diffusion model was extended for NBTI simulations at arbitrary gate voltage, frequency, and duty cycle within a calibrated range. Long-time NBTI degradation was simulated up to 10 years in order to estimate the transistor lifetime under typical chip operation conditions.