Nano Science and Technology Institute
Nanotech 2005 Vol. 3
Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 1: Nanoscale Device and Process Modeling

Simulation of Dynamic NBTI Degradation for a 90nm CMOS Technology

Authors:R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring and S. Selberherr
Affilation:Vienna University of Technology, AT
Pages:29 - 32
Keywords:transistor reliability simulation, NBTI degradation, lifetime estimation
Abstract:The NBTI degradation was systematically investigated for a 90nm p-MOSFET by simulation and experiment. The reaction-diffusion model was extended for NBTI simulations at arbitrary gate voltage, frequency, and duty cycle within a calibrated range. Long-time NBTI degradation was simulated up to 10 years in order to estimate the transistor lifetime under typical chip operation conditions.
Simulation of Dynamic NBTI Degradation for a 90nm CMOS TechnologyView PDF of paper
Order:Mail/Fax Form
© 2017 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map