Nano Science and Technology Institute
Nanotech 2005 Vol. 3
Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 1: Nanoscale Device and Process Modeling

A Physically-Based Electron Mobility Model for Strained Si Devices

Authors:S. Dhar, H. Kosina, V. Palankovski, E. Ungersboeck and S. Selberherr
Affilation:TU-Vienna, AT
Pages:13 - 16
Keywords:strained Si, mobility model, inter-valley scattering
Abstract:A model describing the mobility tensor for electrons in strained Si layers as a function of strain is presented. It includes the effect of strain-induced splitting of the conduction band valleys in Si, inter-valley scattering, and doping dependence. The dependence of the electron mobility components on the orientation of the underlying SiGe layer is taken into account by performing a transformation of the strain tensor from the interface coordinate system to the principle coordinate system. In order to validate the model, Monte Carlo simulations were performed and the results obtained have been fit to experimental data which are available mainly in the form of piezo-resistance coefficients. Results obtained from the model exhibit very good agreement with the Monte Carlo results for all strain levels and substrate orientations. The model is suitable for implementation into any conventional TCAD simulation tool.
A Physically-Based Electron Mobility Model for Strained Si DevicesView PDF of paper
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