Nano Science and Technology Institute
Nanotech 2005 Vol. 2
Nanotech 2005 Vol. 2
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 7: NEMS and MEMS Fabrication
 

Application of Magnetic Neutral Loop Discharge Plasma in Deep Quartz and Silicon Etching Process for MEMS/NEMS Devices Fabrication

Authors:Y. Morikawa, T. Hayashi, K. Suu and M. Ishikawa
Affilation:ULVAC, Inc., JP
Pages:501 - 503
Keywords:deep etching, NLD, plasma, modulation
Abstract:ULVAC’s Si deep etching technique has achieved high etching rate as high as 20 um/min as well as extremely high selectivity over resist mask as high as 100 or higher ensuring good etching performance.
Application of Magnetic Neutral Loop Discharge Plasma in Deep Quartz and Silicon Etching Process for MEMS/NEMS Devices FabricationView PDF of paper
ISBN:0-9767985-1-4
Pages:808
Hardcopy:$109.95
 
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