Nanotech 2005 Vol. 2
Nanotech 2005 Vol. 2
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2

NEMS and MEMS Fabrication Chapter 7

Application of Magnetic Neutral Loop Discharge Plasma in Deep Quartz and Silicon Etching Process for MEMS/NEMS Devices Fabrication

Authors: Y. Morikawa, T. Hayashi, K. Suu and M. Ishikawa

Affilation: ULVAC, Inc., Japan

Pages: 501 - 503

Keywords: deep etching, NLD, plasma, modulation

Abstract:
ULVAC’s Si deep etching technique has achieved high etching rate as high as 20 um/min as well as extremely high selectivity over resist mask as high as 100 or higher ensuring good etching performance.

Application of Magnetic Neutral Loop Discharge Plasma in Deep Quartz and Silicon Etching Process for MEMS/NEMS Devices Fabrication

ISBN: 0-9767985-1-4
Pages: 808
Hardcopy: $109.95