Nanotech 2005 Vol. 2
Nanotech 2005 Vol. 2
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2

NEMS and MEMS Fabrication Chapter 7

Fabrication of Well-aligned and Mono-modal Germanium Dots on the Silicon Substrate with Trench-ridge Nano-structures

Authors: Y.J. Chen, Y.H. Peng, P.S. Chen and C.H. Kuan

Affilation: National Taiwan University, Taiwan

Pages: 497 - 500

Keywords: germanium dots, nano, e-beam, CVD

Abstract:
Here we report the ability to fabricate well-aligned and mono-modal Ge dots on the silicon substrate with nano-trenches. It is started with electron beam lithography system (E-beam) to make patterns. Then reactive ion etching (RIE) is used to fabricate silicon trenches. At last, Ge dots are grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). In our experiments, it is observed that well-aligned and mono-modal Ge dots are only grown on the ridges. A model is also set up to explain the growth of Ge dots on the silicon substrate with nano-structures. Manipulation of nano-structures allows us to grow Ge dots at the predetermined position. It offers the potential applications of Ge-dots array for the implementation of nano-devices.

Fabrication of Well-aligned and Mono-modal Germanium Dots on the Silicon Substrate with Trench-ridge Nano-structures

ISBN: 0-9767985-1-4
Pages: 808
Hardcopy: $109.95