Nano Science and Technology Institute
Nanotech 2005 Vol. 2
Nanotech 2005 Vol. 2
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 7: NEMS and MEMS Fabrication
 

Fabrication of Well-aligned and Mono-modal Germanium Dots on the Silicon Substrate with Trench-ridge Nano-structures

Authors:Y.J. Chen, Y.H. Peng, P.S. Chen and C.H. Kuan
Affilation:National Taiwan University, TW
Pages:497 - 500
Keywords:germanium dots, nano, e-beam, CVD
Abstract:Here we report the ability to fabricate well-aligned and mono-modal Ge dots on the silicon substrate with nano-trenches. It is started with electron beam lithography system (E-beam) to make patterns. Then reactive ion etching (RIE) is used to fabricate silicon trenches. At last, Ge dots are grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). In our experiments, it is observed that well-aligned and mono-modal Ge dots are only grown on the ridges. A model is also set up to explain the growth of Ge dots on the silicon substrate with nano-structures. Manipulation of nano-structures allows us to grow Ge dots at the predetermined position. It offers the potential applications of Ge-dots array for the implementation of nano-devices.
Fabrication of Well-aligned and Mono-modal Germanium Dots on the Silicon Substrate with Trench-ridge Nano-structuresView PDF of paper
ISBN:0-9767985-1-4
Pages:808
Hardcopy:$109.95
 
Order:Mail/Fax Form
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map