Nanotech 2005 Vol. 2
Nanotech 2005 Vol. 2
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2

NEMS and MEMS Fabrication Chapter 7

Effect of Etchant Composition and Silicon Crystal Orientation on Etch Rate

Authors: D. Yellowaga, J. Starzynski, B. Palmer, J. McFarland and S. Drews

Affilation: Honeywell, United States

Pages: 457 - 459

Keywords: wafer thinning, bulk silicon etch, texture etch, stress relief, wet etchants

Abstract:
Wet etchants can be used for the purpose of wafer thinning to meet die stacking and packaging requirements, stress relief when physical methods of thinning are used, as well as texturing to improve adhesion with back metal. It is possible to tune etchants to have different etch rates for silicon crystal orientation and doping concentration. Etchant composition also dictates surface finish of silicon, and etchants can be blended to delineate scratches and cracks in the wafer surface. The paper will discuss the effects of etchant blends and tool parameters on the etch rate and surface finish of silicon.

Effect of Etchant Composition and Silicon Crystal Orientation on Etch Rate

ISBN: 0-9767985-1-4
Pages: 808
Hardcopy: $109.95