 | Nanotech 2005 Vol. 2
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2
Chapter 5: Surfaces and Films |
SPM Investigation of the Electron Properties YSZ Nanostructured Films | |
| Authors: | D.A. Antonov, O.N. Gorshkov, A.P. Kasatkin, G.A. Maximov, D.A. Saveliev and D.O. Filatov |
| Affilation: | University of Nizhny Novgorod, RU |
| Pages: | 392 - 395 |
| Keywords: | nanoclusters, YZS films, STM, AFM, coulomb blockade, resonance tunneling |
| Abstract: | In present work, the electron properties of YSZ nanostructured films using combined Atomic Force Microscopy / Òunnel Spectroscopy (AFMTS) have been investigated.It was demonstrated, the implantation of the films ZrO2(Y) by zirconium ions reduced forming channels tunnel current with lateral sizes from ~1-10 nm. It was founded, that I-V curves have staircase structures that is typical for coulomb blockade and oscillations that is typical of resonance tunneling through discrete electronic states in nano-size clasters. The form evolution of the separate current channel at increasing a bias voltage on the tunnel contact (probe-dielectric-substrate) has been investigated. It was shown that at low bias voltage the fine structure the channel arose. |
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| ISBN: | 0-9767985-1-4 |
| Pages: | 808 |
| Hardcopy: | $109.95 |
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