Authors: O-K. Kwon, J.W. Kang, K.R. Byun, J.H. Lee and H.J. Hwang
Affilation: Chung-Ang University, Korea
Pages: 234 - 237
Keywords: nanotube, memory, molecular dynamics
In this work, an electromechanical nanotube random access memory (NRAM) device based on carbon nanotube (CNT) shown in Fig. 1 was investigated using atomistic simulations. The interaction between the CNT-lever and the drain electrode or the substrate was very important. When the electrostatic force applied to the CNT-lever was the critical point, the CNT-lever was rapidly bent because of the attractive force between the CNT-lever and the drain. As shown in Fig. 2, the energy curves for the pull-in and the pull-out processes showed the hysteresis loop that was induced by the adhesion of the CNT on the copper, which was the interatomic interaction between the CNT and the copper. The pull-in process could be divided with three regions such as non-contacting mode, short-range non-contact mode, and full-contacting mode. The pull-out process was also divided with three regions such as full-contacting mode, edge-contacting mode, and non-contacting mode.