Nano Science and Technology Institute
Nanotech 2005 Vol. 2
Nanotech 2005 Vol. 2
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 10: Inorganic Nanowires and Metallic Nano Structures
 

Growth of 3C-SiC Nanowires on Nickel Coated Si(100) Substrate using Dichloromethylvinylsilane and Diethylmethylsilane by MOCVD Method

Authors:B.-C. Kang, J.S. Hyun and J.-H. Boo
Affilation:Sungkyunkwan University, KR
Pages:652 - 654
Keywords:3C-SiC, nanowire, MOCVD, Ni catalyst
Abstract:3C-SiC nanowires have been deposited on nickel coated Si(100) substrates using single source precursors by thermal metal-organic chemical vapor deposition (MOCVD) method. Dichloromethylvinylsilane (CH2CHSiC(CH3)Cl2) and diethylmethylsilane (CH3 SiH(C2H5)2) were used as a single precursor without any carrier and bubbler gas.
Growth of 3C-SiC Nanowires on Nickel Coated Si(100) Substrate using Dichloromethylvinylsilane and Diethylmethylsilane by MOCVD MethodView PDF of paper
ISBN:0-9767985-1-4
Pages:808
Hardcopy:$109.95
 
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