Growth of 3C-SiC Nanowires on Nickel Coated Si(100) Substrate using Dichloromethylvinylsilane and Diethylmethylsilane by MOCVD Method

	Nanotech 2005 Vol. 2 Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2 Chapter 10: Inorganic Nanowires and Metallic Nano Structures
	Growth of 3C-SiC Nanowires on Nickel Coated Si(100) Substrate using Dichloromethylvinylsilane and Diethylmethylsilane by MOCVD Method
Authors:	B.-C. Kang, J.S. Hyun and J.-H. Boo
Affilation:	Sungkyunkwan University, KR
Pages:	652 - 654
Keywords:	3C-SiC, nanowire, MOCVD, Ni catalyst
Abstract:	3C-SiC nanowires have been deposited on nickel coated Si(100) substrates using single source precursors by thermal metal-organic chemical vapor deposition (MOCVD) method. Dichloromethylvinylsilane (CH2CHSiC(CH3)Cl2) and diethylmethylsilane (CH3 SiH(C2H5)2) were used as a single precursor without any carrier and bubbler gas.
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ISBN:	0-9767985-1-4
Pages:	808
Hardcopy:	$109.95

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