Growth of 3C-SiC Nanowires on Nickel Coated Si(100) Substrate using Dichloromethylvinylsilane and Diethylmethylsilane by MOCVD Method
Authors:
B.-C. Kang, J.S. Hyun and J.-H. Boo
Affilation:
Sungkyunkwan University, KR
Pages:
652 - 654
Keywords:
3C-SiC, nanowire, MOCVD, Ni catalyst
Abstract:
3C-SiC nanowires have been deposited on nickel coated Si(100) substrates using single source precursors by thermal metal-organic chemical vapor deposition (MOCVD) method. Dichloromethylvinylsilane (CH2CHSiC(CH3)Cl2) and diethylmethylsilane (CH3 SiH(C2H5)2) were used as a single precursor without any carrier and bubbler gas.
