Nanotech 2005 Vol. 2
Nanotech 2005 Vol. 2
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2

Inorganic Nanowires and Metallic Nano Structures Chapter 10

Growth of 3C-SiC Nanowires on Nickel Coated Si(100) Substrate using Dichloromethylvinylsilane and Diethylmethylsilane by MOCVD Method

Authors: B.-C. Kang, J.S. Hyun and J.-H. Boo

Affilation: Sungkyunkwan University, Korea

Pages: 652 - 654

Keywords: 3C-SiC, nanowire, MOCVD, Ni catalyst

Abstract:
3C-SiC nanowires have been deposited on nickel coated Si(100) substrates using single source precursors by thermal metal-organic chemical vapor deposition (MOCVD) method. Dichloromethylvinylsilane (CH2CHSiC(CH3)Cl2) and diethylmethylsilane (CH3 SiH(C2H5)2) were used as a single precursor without any carrier and bubbler gas.

Growth of 3C-SiC Nanowires on Nickel Coated Si(100) Substrate using Dichloromethylvinylsilane and Diethylmethylsilane by MOCVD Method

ISBN: 0-9767985-1-4
Pages: 808
Hardcopy: $109.95