Authors: J. Han, M. Je and H. Shin
Affilation: Korea Advanced Institute of Science & Technology, Korea
Pages: 335 - 338
Keywords: RF MOSFET, MOSFET modeling, substrate resistance, substrate coupling, parameter extraction
A simple and accurate method is presented for extracting the substrate resistance of RF MOSFETs. The extraction results for 0.18 um MOSFETs are shown for various bias conditions. The dependence of the extracted substrate resistances on the device geometry is also presented. The substrate signal coupling effect on the small-signal output admittance and its gate-bias dependence are analyzed.