Physical Modeling of Substrate Resistance in RF MOSFETs

	WCM 2005 Technical Proceedings of the 2005 Workshop on Compact Modeling Chapter 4: WCM 2003 Invited Papers
	Physical Modeling of Substrate Resistance in RF MOSFETs
Authors:	J. Han, M. Je and H. Shin
Affilation:	Korea Advanced Institute of Science & Technology, KR
Pages:	335 - 338
Keywords:	RF MOSFET, MOSFET modeling, substrate resistance, substrate coupling, parameter extraction
Abstract:	A simple and accurate method is presented for extracting the substrate resistance of RF MOSFETs. The extraction results for 0.18 um MOSFETs are shown for various bias conditions. The dependence of the extracted substrate resistances on the device geometry is also presented. The substrate signal coupling effect on the small-signal output admittance and its gate-bias dependence are analyzed.
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ISBN:	0-9767985-3-0
Pages:	412
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