WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling

WCM 2003 Invited Papers Chapter 4

Physical Modeling of Substrate Resistance in RF MOSFETs

Authors: J. Han, M. Je and H. Shin

Affilation: Korea Advanced Institute of Science & Technology, Korea

Pages: 335 - 338

Keywords: RF MOSFET, MOSFET modeling, substrate resistance, substrate coupling, parameter extraction

Abstract:
A simple and accurate method is presented for extracting the substrate resistance of RF MOSFETs. The extraction results for 0.18 um MOSFETs are shown for various bias conditions. The dependence of the extracted substrate resistances on the device geometry is also presented. The substrate signal coupling effect on the small-signal output admittance and its gate-bias dependence are analyzed.


ISBN: 0-9767985-3-0
Pages: 412

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