Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
 
Chapter 4: WCM 2003 Invited Papers
 

Physical Modeling of Substrate Resistance in RF MOSFETs

Authors:J. Han, M. Je and H. Shin
Affilation:Korea Advanced Institute of Science & Technology, KR
Pages:335 - 338
Keywords:RF MOSFET, MOSFET modeling, substrate resistance, substrate coupling, parameter extraction
Abstract:A simple and accurate method is presented for extracting the substrate resistance of RF MOSFETs. The extraction results for 0.18 um MOSFETs are shown for various bias conditions. The dependence of the extracted substrate resistances on the device geometry is also presented. The substrate signal coupling effect on the small-signal output admittance and its gate-bias dependence are analyzed.
Physical Modeling of Substrate Resistance in RF MOSFETsView PDF of paper
ISBN:0-9767985-3-0
Pages:412
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