Authors: J. Fossum, L. Ge and M-H Chiang
Affilation: University of Florida, United States
Pages: 319 - 322
Keywords: compact model, predictive circuit simulation, nano-scale CMOS, DG MOSFET, FD/SOI MOSFET
A process/physics-based compact model (UFDG) for double-gate (DG) MOSFETs is overviewed. The model, in essence, is a compact Poisson-Schrödinger solver, including accountings for short-channel effects, and is applicable to nano-scale fully depleted (FD) SOI MOSFETs as well as generic DG devices in ultra-thin Si films. The utility of UFDG is demonstrated by using it in Spice3 to design and characterize thin Si-film MOSFETs and to project extremely scaled DG and FD/SOI CMOS performances.