| |
 | WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 4: WCM 2003 Invited Papers |
| | A Physics-Based Compact Model for Nano-Scale DG and FD/SOI MOSFETs | | Authors: | J. Fossum, L. Ge and M-H Chiang | | Affilation: | University of Florida, US | | Pages: | 319 - 322 | | Keywords: | compact model, predictive circuit simulation, nano-scale CMOS, DG MOSFET, FD/SOI MOSFET | | Abstract: | A process/physics-based compact model (UFDG) for double-gate (DG) MOSFETs is overviewed. The model, in essence, is a compact Poisson-Schrödinger solver, including accountings for short-channel effects, and is applicable to nano-scale fully depleted (FD) SOI MOSFETs as well as generic DG devices in ultra-thin Si films. The utility of UFDG is demonstrated by using it in Spice3 to design and characterize thin Si-film MOSFETs and to project extremely scaled DG and FD/SOI CMOS performances. | | ISBN: | 0-9767985-3-0 |
| Pages: | 412 |
| Hardcopy: | $120.00 |
| Special: | 3 CD Set — 15% off with Free Shipping |
| Up | |
|
| nanoPRwire™ |
 |
| News Headlines |
 |
|
|
| |
| |
|
| | |
| |
|
|
