A Physics-Based Compact Model for Nano-Scale DG and FD/SOI MOSFETs

	WCM 2005 Technical Proceedings of the 2005 Workshop on Compact Modeling Chapter 4: WCM 2003 Invited Papers
	A Physics-Based Compact Model for Nano-Scale DG and FD/SOI MOSFETs
Authors:	J. Fossum, L. Ge and M-H Chiang
Affilation:	University of Florida, US
Pages:	319 - 322
Keywords:	compact model, predictive circuit simulation, nano-scale CMOS, DG MOSFET, FD/SOI MOSFET
Abstract:	A process/physics-based compact model (UFDG) for double-gate (DG) MOSFETs is overviewed. The model, in essence, is a compact Poisson-Schrödinger solver, including accountings for short-channel effects, and is applicable to nano-scale fully depleted (FD) SOI MOSFETs as well as generic DG devices in ultra-thin Si films. The utility of UFDG is demonstrated by using it in Spice3 to design and characterize thin Si-film MOSFETs and to project extremely scaled DG and FD/SOI CMOS performances.
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ISBN:	0-9767985-3-0
Pages:	412
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