Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 4: WCM 2003 Invited Papers

A Physics-Based Compact Model for Nano-Scale DG and FD/SOI MOSFETs

Authors:J. Fossum, L. Ge and M-H Chiang
Affilation:University of Florida, US
Pages:319 - 322
Keywords:compact model, predictive circuit simulation, nano-scale CMOS, DG MOSFET, FD/SOI MOSFET
Abstract:A process/physics-based compact model (UFDG) for double-gate (DG) MOSFETs is overviewed. The model, in essence, is a compact Poisson-Schrödinger solver, including accountings for short-channel effects, and is applicable to nano-scale fully depleted (FD) SOI MOSFETs as well as generic DG devices in ultra-thin Si films. The utility of UFDG is demonstrated by using it in Spice3 to design and characterize thin Si-film MOSFETs and to project extremely scaled DG and FD/SOI CMOS performances.
A Physics-Based Compact Model for Nano-Scale DG and FD/SOI MOSFETsView PDF of paper
© 2017 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map