Authors: M. Chan, Y. Taur, C.H. Lin, J. He, A. Niknejad and C. Hu
Affilation: Hong Kong University of Science & Technology, Hong Kong
Pages: 315 - 318
Keywords: CMOS device, double-gate MOSFET, circuit simulation, device model, SPICE, BSIM
This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to accommodate different device structures takes a much high precedence compared with conventional modeling approaches. In addition, detail device physics based on 2-D and even 3-D analysis at very small dimensions have to be incorporated to describe the device operation accurately. A flexible quasi-Femi potential core model is described to achieve both physical accuracy and extendibility.