Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 4: WCM 2003 Invited Papers

A Framework for Generic Physics Based Double-Gate MOSFET Modeling

Authors:M. Chan, Y. Taur, C.H. Lin, J. He, A. Niknejad and C. Hu
Affilation:Hong Kong University of Science & Technology, HK
Pages:315 - 318
Keywords:CMOS device, double-gate MOSFET, circuit simulation, device model, SPICE, BSIM
Abstract:This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to accommodate different device structures takes a much high precedence compared with conventional modeling approaches. In addition, detail device physics based on 2-D and even 3-D analysis at very small dimensions have to be incorporated to describe the device operation accurately. A flexible quasi-Femi potential core model is described to achieve both physical accuracy and extendibility.
A Framework for Generic Physics Based Double-Gate MOSFET ModelingView PDF of paper
© 2017 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map