WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling

WCM 2003 Invited Papers Chapter 4

A Technology-based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization

Authors: X. Zhou, S.B. Chiah and K.Y. Lim

Affilation: Nanyang Technological University, Singapore

Pages: 311 - 314

Keywords: compact model, deep-submicron MOSFETs, scalability, symmetry, technology development

Abstract:
This paper presents new development results of our compact model (Xsim) for deep-submicron MOSFETs. Although a threshold-voltage-based and source-referenced regional model, Xsim meets the basic requirements of continuity (to third-order derivatives), scalability (entire geometry range), and symmetry, with a single-piece unified equation that approaches the ideal long-side-channel expression. Model calibration requires minimum measurement data with one-iteration parameter extraction, which can be extrapolated to predicting characteristics of extremely-scaled devices with severe threshold voltage roll-off, a regime in which most common models do not (or cannot) model.

A Technology-based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization

ISBN: 0-9767985-3-0
Pages: 412