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 | WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 4: WCM 2003 Invited Papers |
| | A Technology-based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization | | Authors: | X. Zhou, S.B. Chiah and K.Y. Lim | | Affilation: | Nanyang Technological University, SG | | Pages: | 311 - 314 | | Keywords: | compact model, deep-submicron MOSFETs, scalability, symmetry, technology development | | Abstract: | This paper presents new development results of our compact model (Xsim) for deep-submicron MOSFETs. Although a threshold-voltage-based and source-referenced regional model, Xsim meets the basic requirements of continuity (to third-order derivatives), scalability (entire geometry range), and symmetry, with a single-piece unified equation that approaches the ideal long-side-channel expression. Model calibration requires minimum measurement data with one-iteration parameter extraction, which can be extrapolated to predicting characteristics of extremely-scaled devices with severe threshold voltage roll-off, a regime in which most common models do not (or cannot) model. | | ISBN: | 0-9767985-3-0 |
| Pages: | 412 |
| Hardcopy: | $120.00 |
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