A Technology-based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization

	WCM 2005 Technical Proceedings of the 2005 Workshop on Compact Modeling Chapter 4: WCM 2003 Invited Papers
	A Technology-based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization
Authors:	X. Zhou, S.B. Chiah and K.Y. Lim
Affilation:	Nanyang Technological University, SG
Pages:	311 - 314
Keywords:	compact model, deep-submicron MOSFETs, scalability, symmetry, technology development
Abstract:	This paper presents new development results of our compact model (Xsim) for deep-submicron MOSFETs. Although a threshold-voltage-based and source-referenced regional model, Xsim meets the basic requirements of continuity (to third-order derivatives), scalability (entire geometry range), and symmetry, with a single-piece unified equation that approaches the ideal long-side-channel expression. Model calibration requires minimum measurement data with one-iteration parameter extraction, which can be extrapolated to predicting characteristics of extremely-scaled devices with severe threshold voltage roll-off, a regime in which most common models do not (or cannot) model.
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ISBN:	0-9767985-3-0
Pages:	412
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