Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 4: WCM 2003 Invited Papers

An Advanced Surface-Potential-Plus MOSFET Model

Authors:J. He, X. Xi, M. Chan, A. Niknejad and C. Hu
Affilation:University of California at Berkeley, US
Pages:307 - 310
Keywords:MOSFETs, compact modeling, surface-potential-plus model, small dimensional effects
Abstract:Like other surface-potential based model, our surface-potential-plus model starts with charge-sheet approximation, uses the quasi-Fermi-potential to integrate drift and diffusion current and formulates an inversion charge equation that can be analytically solved for given terminal voltage. This eliminates the need for precise computation of the surface potential. Based on the inversion charge solution, a continuous, symmetric and accurate MOS model is developed. Various small dimensional effects including polysilicon depletion, quantum mechanical effects, velocity overshoot, source-side injection limit effect and quasi ballistic transport of nano-scale MOSFETs are integrated naturally into this model. The modeling framework is easily extendable to SOI and double-gate MOSFETs.
An Advanced Surface-Potential-Plus MOSFET ModelView PDF of paper
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