HiSIM: Accurate Charge Modeling Important for RF Era

	WCM 2005 Technical Proceedings of the 2005 Workshop on Compact Modeling Chapter 4: WCM 2003 Invited Papers
	HiSIM: Accurate Charge Modeling Important for RF Era
Authors:	M. Miura-Mattausch, D. Navarro, H. Ueno, H.J. Mattausch, K. Morikawa, S. Itoh, A. Kobayashi and H. Masuda
Affilation:	Hiroshima University, JP
Pages:	303 - 306
Keywords:	MOSFET model, surface potential, charge-based modeling, sub-100nm technology
Abstract:	Extension of the gradual-channel approximation is presented with the surface-potential-based MOSFET modeling. All phenomena observed under the saturation condition are described by the potential increase in the pinch-off region in a self-consistent way. The charge induced by the high lateral electric field is demonstrated to become a major contributing factor in the charge distribution of small-size MOSFETs, instead of the conventional intrinsic part. This changes the charge partitioning of the inversion charge, which changes the high-frequency response of small-size MOSFETs as well.
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ISBN:	0-9767985-3-0
Pages:	412
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