Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 4: WCM 2003 Invited Papers

A Basic Property of MOS Transistors and its Circuit Implications

Authors:E. Vittoz, C. Enz and F. Krummenacher
Affilation:Swiss Center for Electronics & Microtechnology, CH
Pages:291 - 294
Keywords:MOS transistor, superposition, symmetry, current mode
Abstract:The MOS transistor drain current is the (linear) superposition of independent and symmetrical effects of source and drain voltages. This basic property is not affected by the geometry or symmetry of the transistor, by the level of gate voltage or by narrow channel effects. However, it progressively deteriorates when the channel is shortened. Except in weak inversion, it is also degraded by structural non-homogeneities along the channel. This property can be exploited by means of the concept of pseudo-resistors to implement transistor-only linear circuits in the current domain.
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