Implications of Gate Tunneling and Quantum Effects in the Gate-Channel Stack

	WCM 2005 Technical Proceedings of the 2005 Workshop on Compact Modeling Chapter 4: WCM 2003 Invited Papers
	Implications of Gate Tunneling and Quantum Effects in the Gate-Channel Stack
Authors:	R.W. Dutton and C-H Choi
Affilation:	Stanford University, US
Pages:	287 - 290
Keywords:	gate tunneling, DG SOI, quantum effect, CV
Abstract:	Simulation and modeling of gate tunneling current for thin-oxide MOSFETs and Double-Gate SOIs are discussed. Guidelines for design of leady MOS capacitors are proposed. Resonant gate tunneling current in DG SOI is simulated, based on quantum-mechanical models, and shown to be an issue of growing concern.
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ISBN:	0-9767985-3-0
Pages:	412
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