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 | WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 4: WCM 2003 Invited Papers |
| | Implications of Gate Tunneling and Quantum Effects in the Gate-Channel Stack | | Authors: | R.W. Dutton and C-H Choi | | Affilation: | Stanford University, US | | Pages: | 287 - 290 | | Keywords: | gate tunneling, DG SOI, quantum effect, CV | | Abstract: | Simulation and modeling of gate tunneling current for thin-oxide MOSFETs and Double-Gate SOIs are discussed. Guidelines for design of leady MOS capacitors are proposed. Resonant gate tunneling current in DG SOI is simulated, based on quantum-mechanical models, and shown to be an issue of growing concern. | | ISBN: | 0-9767985-3-0 |
| Pages: | 412 |
| Hardcopy: | $120.00 |
| Special: | 3 CD Set — 15% off with Free Shipping |
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