WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling

WCM 2003 Invited Papers Chapter 4

Implications of Gate Tunneling and Quantum Effects in the Gate-Channel Stack

Authors: R.W. Dutton and C-H Choi

Affilation: Stanford University, United States

Pages: 287 - 290

Keywords: gate tunneling, DG SOI, quantum effect, CV

Abstract:
Simulation and modeling of gate tunneling current for thin-oxide MOSFETs and Double-Gate SOIs are discussed. Guidelines for design of leady MOS capacitors are proposed. Resonant gate tunneling current in DG SOI is simulated, based on quantum-mechanical models, and shown to be an issue of growing concern.

Implications of Gate Tunneling and Quantum Effects in the Gate-Channel Stack

ISBN: 0-9767985-3-0
Pages: 412