WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling

WCM 2004 Invited Papers Chapter 3

Quasi-2D Compact Modeling for Double-Gate MOSFET

Authors: M. Chan, T.Y. Man, J. He, X. Xi, C-H Lin, X. Lin, P.K. Ko, A.M. Niknejad and C. Hu

Affilation: Hong Kong University of Science and Technology, Hong Kong

Pages: 271 - 276

Keywords: CMOS device, double-gate MOSFET, circuit simulation, device model, SPICE, BSIM

Abstract:
This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the silicon film thickness and cannot be ignored. Together with volume inversion and quantum effect, the carriers are distributed along the vertical direction perpendicular to the direction of current flow. Therefore, a 2-D modeling approach considering vertical current distribution and lateral carrier transport is required. To simplify the 2-D problem, the quasi-Fermi potential has been taken as a reference to develop a quasi 2-D DG MOSFET model.

Quasi-2D Compact Modeling for Double-Gate MOSFET

ISBN: 0-9767985-3-0
Pages: 412