Authors: M. Chan, T.Y. Man, J. He, X. Xi, C-H Lin, X. Lin, P.K. Ko, A.M. Niknejad and C. Hu
Affilation: Hong Kong University of Science and Technology, Hong Kong
Pages: 271 - 276
Keywords: CMOS device, double-gate MOSFET, circuit simulation, device model, SPICE, BSIM
This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the silicon film thickness and cannot be ignored. Together with volume inversion and quantum effect, the carriers are distributed along the vertical direction perpendicular to the direction of current flow. Therefore, a 2-D modeling approach considering vertical current distribution and lateral carrier transport is required. To simplify the 2-D problem, the quasi-Fermi potential has been taken as a reference to develop a quasi 2-D DG MOSFET model.