WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling

WCM 2004 Invited Papers Chapter 3

Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors

Authors: H. Tran and M. Schroter

Affilation: University of Technology Dresden, Germany

Pages: 265 - 270

Keywords: bipolar transistor, analytical modeling, compact model

Abstract:
An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the field related transit time components. Comparison to device simulation results show good agreement.


ISBN: 0-9767985-3-0
Pages: 412

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