Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
 
Chapter 3: WCM 2004 Invited Papers
 

Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors

Authors:H. Tran and M. Schroter
Affilation:University of Technology Dresden, DE
Pages:265 - 270
Keywords:bipolar transistor, analytical modeling, compact model
Abstract:An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the field related transit time components. Comparison to device simulation results show good agreement.
Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar TransistorsView PDF of paper
ISBN:0-9767985-3-0
Pages:412
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