Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs

	WCM 2005 Technical Proceedings of the 2005 Workshop on Compact Modeling Chapter 3: WCM 2004 Invited Papers
	Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs
Authors:	X. Zhou, S.B. Chiah, K. Chandrasekaran, K.Y. Lim, L. Chan and S. Chu
Affilation:	Nanyang Technological University, SG
Pages:	237 - 242
Keywords:	compact model, symmetry, charge-based model, deep-submicron MOSFET, poly depletion, Xsim
Abstract:	This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deepsubmicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source–drain symmetry, charge-based AC model fully consistent with DC without the need for C -V data, and inclusion of polydepletion effect for both DC and AC models.
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ISBN:	0-9767985-3-0
Pages:	412
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