Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
 
Chapter 3: WCM 2004 Invited Papers
 

The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation

Authors:X. Xi, J. He, M. Dunga, C-H Lin, B. Heyderi, H. Wan, M. Chan, A.M. Niknejad and C. Hu
Affilation:University of California at Berkeley, US
Pages:233 - 236
Keywords:MOSFETs, compact modeling, surfacepotential-plus model, small dimensional effects
Abstract:This paper describes the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate non-charge-sheet based physics, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.
The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit SimulationView PDF of paper
ISBN:0-9767985-3-0
Pages:412
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