WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling

WCM 2004 Invited Papers Chapter 3

The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation

Authors: X. Xi, J. He, M. Dunga, C-H Lin, B. Heyderi, H. Wan, M. Chan, A.M. Niknejad and C. Hu

Affilation: University of California at Berkeley, United States

Pages: 233 - 236

Keywords: MOSFETs, compact modeling, surfacepotential-plus model, small dimensional effects

Abstract:
This paper describes the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate non-charge-sheet based physics, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.

The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation

ISBN: 0-9767985-3-0
Pages: 412