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 | WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 3: WCM 2004 Invited Papers |
| | Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description | | Authors: | M. Miura-Mattausch, S. Hosokawa, D. Navarro, S. Matsumoto, H. Ueno, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, T. Kage, and S. Miyamoto | | Affilation: | Hiroshima University, JP | | Pages: | 229 - 232 | | Keywords: | MOSFET model, noise measurement, surface potential, HiSIM | | Abstract: | Accurate prediction of noise characteristics is a prerequisite for RF-circuit simulation. We demonstrate here that the 1/f noise is modeled only with the trap density as a model parameter and the thermal drain noise is determined only by the I-V characteristics even for short-channelMOSFETs. Good agreement with measurements is the justification of the model implemented in HiSIM, the circuit simulation model based on a full surface-potential description. The thermal drain-noise coefficient of short-channel MOSFETs increases from 2/3 under the saturation condition. The origin is explained by the potential increase along the channel. | | ISBN: | 0-9767985-3-0 |
| Pages: | 412 |
| Hardcopy: | $120.00 |
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