WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling

WCM 2004 Invited Papers Chapter 3

Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description

Authors: M. Miura-Mattausch, S. Hosokawa, D. Navarro, S. Matsumoto, H. Ueno, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, T. Kage, and S. Miyamoto

Affilation: Hiroshima University, Japan

Pages: 229 - 232

Keywords: MOSFET model, noise measurement, surface potential, HiSIM

Abstract:
Accurate prediction of noise characteristics is a prerequisite for RF-circuit simulation. We demonstrate here that the 1/f noise is modeled only with the trap density as a model parameter and the thermal drain noise is determined only by the I-V characteristics even for short-channelMOSFETs. Good agreement with measurements is the justification of the model implemented in HiSIM, the circuit simulation model based on a full surface-potential description. The thermal drain-noise coefficient of short-channel MOSFETs increases from 2/3 under the saturation condition. The origin is explained by the potential increase along the channel.

Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description

ISBN: 0-9767985-3-0
Pages: 412