Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
 
Chapter 2: Poster Papers
 

An Optimization Method of Deep Submicron SOI Compact Model Parameter Extraction

Authors:Y. Mahotin and R. Mickevicius
Affilation:Synopsys, Inc., US
Pages:211 - 214
Keywords:FB-SOI, partially deplited (PD) SOI, compact model parameter extraction, optimization.
Abstract:As SOI rapidly advances to the vanguard of ULSI technology, compact model parameter extraction for SOI still relies on indirect methods. Floating body (FB) device parameter extraction is currently based on body contact (BC) devices. However, the underlying physics of these two devices is quite different and therefore, matching of their characteristics is problematic. In this work we report a novel direct method. For the first time the model parameters of deep submicron SOI have been extracted using only FB device. In addition to standard model parameters, we have been able to extract gate current, impact ionization current, GIDL current, as well as diode and BJT currents using only FB device.
An Optimization Method of Deep Submicron SOI Compact Model Parameter ExtractionView PDF of paper
ISBN:0-9767985-3-0
Pages:412
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