Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 2: Poster Papers

Airgap and Line Slope Modeling for Interconnect

Authors:F. Badrieh and H. Puchner
Affilation:Cypress Semiconductor, US
Pages:203 - 206
Keywords:interconnect, airgaps, voids, field solver, line slope, backend, modeling, capacitance
Abstract:We have devised a generic methodology for characterizing airgaps and line slope and including those features in interconnect modeling. The method is silicon-based and can be used to accurately model the impact on capacitance. Our main conclusion is that airgaps result in a significant reduction in capacitance at smaller space. Metal slope on the other hand kick in at moderate-to-large space and results in an increase in capacitance.
Airgap and Line Slope Modeling for InterconnectView PDF of paper
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