A Compact I-V Model for FinFETs Comprising Multi-Dimensional Electrostatics and Quantum Mechanical Effects

	WCM 2005 Technical Proceedings of the 2005 Workshop on Compact Modeling Chapter 2: Poster Papers
	A Compact I-V Model for FinFETs Comprising Multi-Dimensional Electrostatics and Quantum Mechanical Effects
Authors:	D. Zhang, Z. Yu and L. Tian
Affilation:	Tsinghua University, CN
Pages:	191 - 194
Keywords:	2D electrostatics, 2D quantum effects, charge, current
Abstract:	A compact I-V model for FinFET using ballistic transport with 1D electron gas is presented. The 2D electrostatics and 2D quantum mechanical (QM) effects at the cross-section are fully taken into account, which ensures the applicability to various types of FinFETs, from double-gate (DG) to Omega FinFET or nanowire FinFET. Compared to numerical simulations and experimental data, the model correctly predicts carrier density and terminal current of decanano-scaled devices.
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ISBN:	0-9767985-3-0
Pages:	412
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