Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
 
Chapter 2: Poster Papers
 

A Compact Model for the Threshold Voltage of Silicon Nanowire MOS Transistors including 2D-Quantum Confinement Effects

Authors:K. Nehari, J.L. Autran, D. Munteanu and M. Bescond
Affilation:L2MP-CNRS, FR
Pages:175 - 178
Keywords:nanowire MOSFET, Double-Gate MOSFET, threshold voltage, quantum effects
Abstract:A quantum-mechanical compact model of the threshold voltage for quantum-wire (QW) MOSFETs has been developed. This approach is based on analytical 2D solutions for the decoupled Schrödinger and Poisson equations solved in a 2D cross-section of the silicon channel. A quantum correction based on the perturbation theory has been also introduced to improve the model accuracy. Finally, the validity of the model has been verified by comparison with data obtained with a 2D/3D Poisson-Schrödinger drift-diffusion simulation code.
A Compact Model for the Threshold Voltage of Silicon Nanowire MOS Transistors including 2D-Quantum Confinement EffectsView PDF of paper
ISBN:0-9767985-3-0
Pages:412
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